vs-40ctq150s-m3, VS-40CTQ150-1-M3 www.vishay.com vishay semiconductors revision: 29-jul-14 1 document number: 95732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 2 x 20 a features ? very low forward voltage drop ? 175 c t j operation ? center tap to-220 package ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? guard ring for enhanced ruggedness and long term reliability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? designed and qualified according to jedec ? -jesd47 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description the vs-40ctq... center tap schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. the proprietary barrier technology allows for reliable operation up to 175 c junction temperature. typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. ? ? product summary package to-263ab (d 2 pak), to-262aa i f(av) 2 x 20 a v r 150 v v f at i f 0.71 v i rm 15 ma at 125 c t j max. 175 c diode variation common cathode e as 1 mj to-26 3 ab (d 2 pak) to-262aa v s -40ctq150 s -m 3 v s -40ctq150-1-m 3 ba s e common cathode anode anode common cathode 1 3 2 2 ba s e common cathode anode anode common cathode 1 3 2 2 major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 40 a v rrm 150 v i fsm t p = 5 s sine 1500 a v f 20 a pk , t j = 125 c (per leg) 0.71 v t j -55 to +175 c voltage ratings parameter symbol vs-40ctq150s-m3 VS-40CTQ150-1-M3 units maximum dc reverse voltage v r 150 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current ? see fig. 5 per leg i f(av) 50 % duty cycle at t c = 140 c, rectan gular waveform 20 a per device 40 maximum peak one cycle non-repetitive surge current per leg see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1500 10 ms sine or 6 ms rect. pulse 250 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 1.5 a, l = 0.9 mh 1.0 mj repetitive avalanche current per leg i ar current decaying linearly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 1.5 a
vs-40ctq150s-m3, VS-40CTQ150-1-M3 www.vishay.com vishay semiconductors revision: 29-jul-14 2 document number: 95732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward volt age drop per leg ? see fig. 1 v fm (1) 20 a t j = 25 c 0.93 v 40 a 1.16 20 a t j = 125 c 0.71 40 a 0.85 maximum reverse leakage current per leg see fig. 2 i rm (1) t j = 25 c v r = rated v r 50 a t j = 125 c 15 ma maximum junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 450 pf typical series inductance per leg l s measured lead to lead 5 mm from package body 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg -55 to +175 c maximum thermal resistance, ? junction to case per leg r thjc dc operation ? see fig. 4 1.5 c/w maximum thermal resistance, ? junction to case per package dc operation 0.75 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum non-lubricated threads 6 (5) kgf ?? cm (lbf ?? in) maximum 12 (10) marking device case style d 2 pak 40ctq150s case style to-262 40ctq150-1
vs-40ctq150s-m3, VS-40CTQ150-1-M3 www.vishay.com vishay semiconductors revision: 29-jul-14 3 document number: 95732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 100 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0.8 1.2 1.6 0 t j = 175 c t j = 125 c t j = 25 c 0.001 1 10 100 0.1 0.01 1000 i r - reverse current (ma) v r - reverse voltage (v) 40 20 60 80 160 100 120 140 0 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 10 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 40 80 160 120 0 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 100 10 single pulse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-40ctq150s-m3, VS-40CTQ150-1-M3 www.vishay.com vishay semiconductors revision: 29-jul-14 4 document number: 95732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-repeti tive surge current (per leg) note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % v r applied 100 120 140 160 180 allowable case temperature (c) i f(av) - average forward current (a) 10 51520 30 25 0 dc square wave (d = 0.50) 80 % v r applied see note (1) 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 10 51520 30 25 0 rms limit dc dc = 0.20 dc = 0.25 dc = 0.33 dc = 0.50 dc = 0.75 100 10 000 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
vs-40ctq150s-m3, VS-40CTQ150-1-M3 www.vishay.com vishay semiconductors revision: 29-jul-14 5 document number: 95732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-40ctq150s-m3 50 1000 antistatic plastic tubes vs-40ctq150strl-m3 800 800 13" diameter reel vs-40ctq150strr-m3 800 800 13" diameter reel VS-40CTQ150-1-M3 50 1000 antistatic plastic tubes links to related documents dimensions to-263ab (d 2 pak) www.vishay.com/doc?95046 to-262aa www.vishay.com/doc?95419 part marking information to-263ab (d 2 pak) www.vishay.com/doc?95444 to-262aa www.vishay.com/doc?95443 packaging information www.vishay.com/doc?95032 spice model www.vishay.com/doc?95434 2 - current rating (40 a) 4 - t = to-220 5 - schottky ?q? series 6 - voltage rating (150 = 150 v) 7 - s = d 2 pak -1 = to-262 8 - none = tube (50 pieces) trl = tape and reel (left oriented - for d 2 pak only) trr = tape and reel (right oriented - for d 2 pak only) 9 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 9 vs- 40 c t q 150 s trl -m3 - circuit configuration: c = common cathode 3 - -m3 = halogen-free, rohs-compliant and termination lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 08-jul-15 1 document number: 95046 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5 m-1994 (2) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be dete rmined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec ? outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec ? outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b m m (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096)
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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